At the IEEE International Electron Devices Meeting (IEDM 2013), imec reported the first functional strained germanium (Ge) quantum-well channel pMOS FinFETs, fabricated with a Si Fin replacement process on 300mm Si wafers. The device shows a possible evolution of the FinFET/trigate architecture for 7nm and 5nm CMOS technologies. Since the 90nm technology, embedded SiGe source/drain has been a popular stressor method to produce strained Si that enhances pMOS devices. With diminishing device di...